Iran's new model presented for electronic nanodevice production

TEHRAN, Nov. 03 (MNA) – Iranian researchers presented a new model to design and produce electronic switches, INIC reports. According to Iran Nanotechnology Initiative Council (INIC), results of the research may lead to an appropriate approach to obtain nanometric devices and equipment to be used in electronics, computers, communication and biosciences. Reducing the size is necessary in the production of electronic devices, including transistors, to increase the speed of calculations in small volume. However, reducing the size is not possible due to the structural problems without using nanostructures such as nanowires, quantum dots, carbon nanotubes and graphene. Therefore, many studies are being carried out to characterize the properties of these structures. In this research, a switch was designed for the first time by using a joint made of silicon nanowire and carbon nanotubes. Results of calculations and simulations show that when the shape of the joint changes for example due to pressure, the electrical current passing through it changes too. Therefore, two modes of 'on' and 'off' can be defined. The theoretical results can be used in the design and production of parts such as switches in electronics and the related industries such as micro-electromechanics and VLSI. The high speed of the switch and its sensitivity to the change in the shape of the joint at nanometric scale provides the opportunity to detect very low pressures, movements and relocations, which have numerous applications in the production of various types of detectors and sensors. Results of the research have been published in Computational Materials Science, vol. 110, 2015, pp. 198-203.