ID :
44750
Sun, 02/08/2009 - 19:59
Auther :
Shortlink :
https://www.oananews.org//node/44750
The shortlink copeid
Hynix develops world`s first 1-gigabit, 44-nano DRAM chip
SEOUL, Feb. 8 (Yonhap) -- Hynix Semiconductor Inc. announced Sunday it has
developed the world's first 1-gigabit dynamic random access memory (DRAM) chip
using 44-nanometer technology.
Mass production of the 1-gigabit DDR3 DRAM chip will begin in the third quarter
of this year, the company said. A nanometer is one-billionth of a meter.
The company expects overall productivity of its new DDR3 DRAM product will be 50
percent greater than existing 54-nanometer technology and will also lower
production costs.
DDR3 DRAM is a random access memory technology used for high bandwidth storage of
working data on a computer or other digital electronic devices.
The new product significantly minimizes leakage current and further reduces
overall power consumption, with a maximum speed of 2133 megabit per second, the
company said.
ygkim@yna.co.kr
(END)
developed the world's first 1-gigabit dynamic random access memory (DRAM) chip
using 44-nanometer technology.
Mass production of the 1-gigabit DDR3 DRAM chip will begin in the third quarter
of this year, the company said. A nanometer is one-billionth of a meter.
The company expects overall productivity of its new DDR3 DRAM product will be 50
percent greater than existing 54-nanometer technology and will also lower
production costs.
DDR3 DRAM is a random access memory technology used for high bandwidth storage of
working data on a computer or other digital electronic devices.
The new product significantly minimizes leakage current and further reduces
overall power consumption, with a maximum speed of 2133 megabit per second, the
company said.
ygkim@yna.co.kr
(END)
