Hynix develops world`s first 1-gigabit, 44-nano DRAM chip

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SEOUL, Feb. 8 (Yonhap) -- Hynix Semiconductor Inc. announced Sunday it has
developed the world's first 1-gigabit dynamic random access memory (DRAM) chip
using 44-nanometer technology.
Mass production of the 1-gigabit DDR3 DRAM chip will begin in the third quarter
of this year, the company said. A nanometer is one-billionth of a meter.
The company expects overall productivity of its new DDR3 DRAM product will be 50
percent greater than existing 54-nanometer technology and will also lower
production costs.
DDR3 DRAM is a random access memory technology used for high bandwidth storage of
working data on a computer or other digital electronic devices.
The new product significantly minimizes leakage current and further reduces
overall power consumption, with a maximum speed of 2133 megabit per second, the
company said.
Samsung Electronics Co. also announced last week it has developed the world's
first 40-nanometer dynamic random access memory (DRAM) chip.
The 40 nanometer-class process technology is considered to be the next generation
of cutting edge technology and will be used mainly for DDR3 DRAM products.
With an aggressive start in the production of 40 nanometer-class technology,
South Korea is expected to fortify its position as a world leader in the DDR3
DRAM market, which watchers say will become the dominant chip market in the
second half of 2009.
ygkim@yna.co.kr
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