ID :
274903
Fri, 02/15/2013 - 14:09
Auther :
Shortlink :
https://www.oananews.org//node/274903
The shortlink copeid
A*Star's Ime Stanford Uni To Jointly Develop “Switch Technology”
SINGAPORE, Feb 15 (Bernama) -- A*STAR’s Institute of Microelectronics (IME)
and Stanford University will collaborate to advance innovations in
nano-electromechanical systems (NEMS) switch technology for ultra low power
digital systems.
In a statement, IME said the use of NEMS switches in digital systems such as
laptops and smart phones can extend operational time of existing batteries,
thereby increasing energy efficiency of such devices.
It said the higher energy efficiency of NEMS switches stems from its
ability to effectively stamp out leakage currents that occur during passive
standby mode. Leakage current is one of the leading sources of power consumption
in digital systems based on traditional semiconductor switches.
By replacing these traditional switches with NEMS switches, the total power
consumption of a digital block can be reduced by up to 10x.
Under the agreement, IME and Stanford University will jointly develop the
NEMS fabrication process and device.
The project will proceed in two phases, with the first phase focused on
demonstrating the reliable operation of the NEMS switch by this year.
On the joint project, Dr Lee Jae Wung, the IME Scientist leading the
project, said, “One of the challenges in building a reliable NEMS switch is in
achieving Thin Film Encapsulation to protect the switch structure and the
contact materials from degradation and oxidation by providing proper vacuum
condition and/or filling inert gas inside the cavity.
He said IME’s capabilities in back end of line compatible materials and
processes are expected to contribute strongly in this area.”
Professor Philip Wong, Willard R. and Inez Kerr Professor in the School of
Engineering at Stanford University said: “NEMS relay has proven to be an
effective complement to conventional Si CMOS technology for reducing power
consumption.
The collaboration with IME will advance this device technology to
a manufacturing process that is suitable for co-integration with Si CMOS in
practical applications.
-- BERNAMA