(LEAD) Samsung Electronics develops world's first 30-nano DRAM chips

(ATTN: ADDS comments in para 2; ADDS more info in last two paras)
SEOUL, Feb. 1 (Yonhap) -- South Korea's Samsung Electronics Co. said Monday it
has developed the world's first 30-nanometer dynamic random access memory (DRAM)
chip.

"Our 30nm-class process technology will provide the most advanced low-power DDR3
available today and therein the most efficient DRAM solutions anywhere for the
introduction of consumer electronics devices and server systems," said Cho
Soo-in, president of the memory division at Samsung Electronics, in a statement.
The company expects the new product will lower power consumption to 85 percent of
existing 40-nanometer DRAM chips. A nanometer is one-billionth of a meter.
The technology will also improve productivity by as much as 60 percent, as each
DRAM chip will take up a smaller space on the production line, Samsung said.
DRAM is a type of memory that stores data in a separate electronic component
within a circuit.
Based on the new nano technology, DDR3, which is emerging as the predominant main
DRAM memory this year, is expected to be used in a broader range of products,
from servers to notebooks, desktops, and future versions of Netbooks and mobile
devices, according to Samsung.
The 30nm-class DDR3 is scheduled for mass production in the second half of this
year, the chipmaker said.
ygkim@yna.co.kr
(END)

Delete & Prev | Delete & Next