Gov't teams up with Samsung, Hynix to develop next-generation memory chips

SEOUL, Nov. 26 (Yonhap) -- The government has teamed up with the world's leading
semiconductor manufacturers on a project to develop a next-generation memory
chip, an effort to help the country maintain its lead in the industry, government
officials said Thursday.
The project calls for the government to work with Samsung Electronics Co. and
Hynix Semiconductor Inc. in conducting research and development to make the
world's first spin transfer torque-magnetic random access memory (STT-MRAM)
devices, the Ministry of Knowledge Economy said
Samsung and Hynix, which effectively control the world's memory chip market, are
vying with Japanese companies to become the first to manufacture a STT-MRAM chip.
"Once the STT-MRAM is developed, South Korea may be able to control roughly 45
percent of the 30-nano type memory chip market by 2015," said Park Tae-sung, head
of the ministry's semiconductor and display division.
The market for the advanced memory device with faster processing time is
projected to top US$53 billion worldwide in the target year.
Park said that the joint R&D effort will also give the country an opportunity to
gain insight into basic technologies that can further buoy the country's
world-class competitiveness in the semiconductor industry.
The government plans to bear half of the entire cost of 24 billion won ($20.8
million) until 2014, with the two South Korean firms to foot the rest of the
bill.
Researchers involved in the joint project are to use a state-of-the-art
laboratory at Hangyang University's fusion technology center that has been set up
for it.
The joint R&D center is already equipped with a fully operational 300mm magnetic
thin film deposition system and other chip-making facilities. The facility,
superior to the 200mm deposition system used by rival Japanese companies to make
their STT-MRAMs, is expected to give the country a critical lead in the
development race, the officials said.
yonngong@yna.co.kr
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